Abstract
Hafnium oxide (HfO2) films synthesized by thermal atomic layer deposition (ALD) are investigated for low-temperature surface passivation of moderately doped crystalline silicon (c-Si). At intermediate bulk injection levels, effective surface recombination velocities of 55cm/s and 24cm/s are achieved on 2.1 ♣cm p-type and 3.3 ♣cm n-type c-Si, respectively, demonstrating a good level of surface passivation. Fourier transform infrared spectroscopy and cross-sectional transmission electron microscopy experiments are conducted to provide insight into the surface passivation mechanism of HfO2 on c-Si. The good passivation quality is shown to be due to both chemical passivation and field-effect passivation. The latter is due to built-in positive charges in the HfO2 film, which is particularly beneficial for the passivation of n-type c-Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
