Abstract
Low temperature magnetization and resistivity measurements of bismuth (Bi) doped Pr0.6− xBixSr0.4MnO3 (x = 0.2, 0.23 and 0.25) manganites synthesized by solid state reaction method are reported here. Resistivity measurements in all bismuth doped samples in the absence of field show no significant metal–insulator transition. But for x = 0.2, in zero field the transition observed at lower temperature is associated with hysteresis indicating its first order nature. The resistivity and magnetization measurements establish the coexistence of ferromagnetic metallic and antiferromagnetic insulating phase at lower temperature. We present magnetization and resistivity measurements on higher concentration of bismuth exhibiting the coexistence of two phases at low temperature and the kinetic arrest of a first-order ferromagnetic-to-antiferromagnetic transition
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
