Abstract
We propose a novel method to pattern the charge recombination layer (CRL) with a low-temperature solution-processable ZnO layer (under 150 °C) for organic solar cell applications. Due to the optimal drying process and thermal annealing condition, ZnO sol-gel particles formed a three-Dimensional (3D) structure without using a high temperature or ramping method. The generated 3D nano-ripple pattern showed a height of around 120 nm, and a valley-to-valley distance of about 500 nm. Based on this newly developed ZnO nano-ripple patterning technique, it was possible to pattern the CRL without damaging the underneath layers in tandem structure. The use of nano-ripple patterned ZnO as the part of CRL, led to the concomitant improvement of the power conversion efficiency (PCE) of about 30%, compared with non-patterned CRL device.
Highlights
Finding alternatives for the current energy sources has become one of the most important societal challenges for relieving the environmental pollution problem [1]
To find the optimal annealing temperature for ZnO films, electron-only devices were fabricated to evaluate the conductivity of ZnO films under different thermal annealing conditions [25]
The film made with the ramping fabrication method shows the highest conductivity among all films, but the difference is weak, and the conductivity values are in the same order of magnitude
Summary
Finding alternatives for the current energy sources (i.e., burning fossil fuels, nuclear materials) has become one of the most important societal challenges for relieving the environmental pollution problem [1]. A tandem structure offers several advantages: (1) a broad absorption spectrum due to the usage of complementary absorbing materials; (2) summation of the open circuit voltage (VOC ) of each sub-cell; (3) a reasonable fill factor (FF) due to higher optical density over a wider fraction of solar spectrum than that of single cell without increasing internal resistance. To maximize these advantages, the tandem device requires the qualified charge recombination layer (CRL) to simultaneously act as the anode for one of two adjacent sub-cells, and as the cathode for the other [12]. As compared to the non-patterned device, the tandem device with ZnO ripple-patterned CRL showed a PCE improvement of about 30%
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