Abstract
This technical review presents the state of the art in low-temperature chemical solution deposition (CSD) processing of ferroelectric oxide thin films. To achieve the integration of multifunctional crystalline oxides with flexible and semiconductor devices is, today, crucial to meet the demands of coming electronic devices. Hence, amorphous metal-oxide-semiconductors have been recently introduced in thin-film electronics. However, their benefits are limited compared with those of ferroelectric oxides, in which intrinsic multifunctionality would make possible multiple operations in the device. However, ferroelectricity is linked to a noncentrosymmetric crystal structure that is achieved, in general, at high temperatures, over 500 °C. These temperatures exceed the thermal stability of flexible polymer substrates and are not compatible with those permitted in the current fabrication routines of Si-based devices. In addition, the manufacturing of flexible electronic devices not only calls for low-temperature fabrication processes but also for deposition techniques that scale easily to the large areas required in flexible devices. In this regard, CSD processes are the best positioned today to integrate metal oxide thin films with flexible substrates as a large-area, low-cost, high-throughput fabrication technique. Here, we review the progress made in the last years in fabricating at low-temperature crystalline ferroelectric oxide thin films via CSD methods, highlighting the recent work of our group in the preparation of ferroelectric oxide thin films on flexible polyimide substrates.
Highlights
T HE 1990’s trend toward the miniaturization of functional devices driven by the microelectronic industry led to the development of thin-film materials integrated with semiconductor substrates (Si-technology), able to use their properties in micro and nanodevices with high integration densities and Manuscript received February 28, 2020; accepted May 12, 2020
Since the beginning of this century, the electronic industry is demanding costefficient, soft-portable, and high-tech devices. This has pushed the advance of Flexible Electronics, where the thin film is supported on cheap flexible substrates [3]–[5]
It should be taken into account that the manufacturing of flexible electronic devices calls for low-temperature fabrication processes and for deposition techniques that scale to the large areas required in flexible devices
Summary
T HE 1990’s trend toward the miniaturization of functional devices driven by the microelectronic industry led to the development of thin-film materials integrated with semiconductor substrates (Si-technology), able to use their properties in micro and nanodevices with high integration densities and Manuscript received February 28, 2020; accepted May 12, 2020. It should be taken into account that the manufacturing of flexible electronic devices calls for low-temperature fabrication processes and for deposition techniques that scale to the large areas required in flexible devices. The deposition of thin films from solutions usually can be carried out under mild conditions [ambient pressure and the so-called chemical solution deposition (CSD)] or under high pressures (hydrothermal and solvothermal methods) The latter makes possible the deposition of the film at low temperatures, even room temperature (not reported in the case of ferroelectric oxides), but they are difficult to apply to the large areas demanded in Flexible Electronics. The sections of this technical review will show the most relevant CSD approaches reported in the literature to attain ferroelectric oxide thin films at low temperatures, on a road to achieve the integration of these multifunctional oxides with Flexible Electronics
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