Abstract
Low-temperature (<500°C) solid-phase crystallization (SPC) of amorphous Si1−xGex (x: 0–0.7) films was examined on insulating substrates by using Ni-imprint technique. Incubation time for SPC was remarkably reduced by catalytic effects without changing growth velocity. As a result, Ni-free large SiGe grains (∼4μm) were obtained at controlled positions. The crystallinity of the grown regions was almost the same as that of poly-SiGe formed by the conventional high temperature SPC at 600°C.
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