Abstract
Sn-rich Au—Sn solder bonding has been systematically investigated for low cost and low temperature wafer-level packaging of high-end MEMS devices. The AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of the Au—Sn system makes a major contribution to the high bonding shear strength. The maximum shear strength of 64 MPa and a leak rate lower than 4.9 × 10−7 atm·cc/s have been obtained for Au46Sn54 solder bonded at 310 °C. This wafer-level low cost bonding technique with high bonding strength can be applied to MEMS devices requiring low temperature packaging.
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