Abstract
AbstractThe effect of Bi2O3‐B2O3‐SiO2‐ZnO glass (denoted as BBSZ) content on the densification, microstructure, and electrical properties of ZnO‐based multilayer varistors (MLVs) has been investigated. In ZnO‐based (MLVs), BBSZ acted as a promoter in ZnO grain growth, which increased the grain size of ZnO, resulting in a decrease in breakdown voltage. Results showed that the adding of BBSZ glass had an improvement in densification and overall properties of MLVs. It was found that a maximum value of 5.45 g/cm3 of the bulk density and the optimum properties (V1mA = 27.28 V, α = 40.33, IL = 0.75 μA, Ip = 35 A) of ZnO‐based MLVs were achieved with 3 wt% BBSZ glass sintered at 925°C for 3 hours.
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