Abstract
By simple diffusion and etching procedures low temperature sensitive surface layers can be prepared on otherwise insulating silicon substrates. Temperature coefficients of the resistance of these layers of the order of unity can be obtained at any temperatures below 20 K. The usefulness of this silicon device as a low temperature thermometer and bolometer is demonstrated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
