Abstract
Undoped silicon (Si) films have been deposited on Si (100) substrates by pulsed magnetron sputtering in pure Ar atmosphere at substrate temperatures TS between 300 and 450°C. Rutherford backscattering channeling (RBS-C) experiments reveal high structural order indicative of epitaxial growth at TS of 375–400°C. The disorder depth profiles derived from RBS-C exhibit defective initial film growth which is markedly reduced in the film volume. Homoepitaxial silicon film growth is observed in this optimal temperature range up to a thickness of 1.6μm and with growth rates of about 20nm/min. At higher and lower substrate temperatures, the disorder in the films is considerably enhanced.
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