Abstract
This paper introduced an approach of die-attach bonding technology based on a low-cost high-purity aluminum (99.99%) sheet in a silicon carbide (SiC)/direct bonded aluminum (DBA) power module. Both sides of an Al sheet were sputtered by a thin Ti and Ag layer, which generated a tensile stress of 166 MPa on the Al surface. After heating, the Al surface displayed a large quantity of Ag hillocks by stress self-release due to the coefficient of thermal expansion (CTE) mismatch among Al, Ti, and Ag. The SiC/Al sheet/DBA substrate interfaces were bridged by the generation of these hillocks, which correspond to a robust shear strength of 33.4 MPa in a low-temperature process. Hillocks generation and the interface bonding mechanism by surface stress self-generation and self-release were systematically analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). The shear strength remains constant at 32.1 MPa after high-temperature storage at 250 °C for 500 h, which suggests that the Al sheet possesses excellent high-heat resistance and thermal stability. This novel approach of die-attach bonding technology serves as an attractive alternative for SiC power devices that require high-temperature performance.
Highlights
IntroductionThis paper introduced an approach of die-attach bonding technology based on a low-cost high-purity aluminum (99.99%) sheet in a silicon carbide (SiC)/direct bonded aluminum (DBA) power module
As the Al sheet has excellent thermal conductivity (237 W/(m·K)), electric resistivity (28.2 nΩ·m), and a high melting temperature (660 °C), it can serve as an excellent solution for wide band gap (WBG) semiconductor die-attach modules in high-temperature applications
The high purity Al sheet bonding technology introduced in this study is more cost-efficient and has a simpler bonding process compared with the Ag thin film bonding technology and Ag sinter paste joining
Summary
This paper introduced an approach of die-attach bonding technology based on a low-cost high-purity aluminum (99.99%) sheet in a silicon carbide (SiC)/direct bonded aluminum (DBA) power module. Both sides of an Al sheet were sputtered by a thin Ti and Ag layer, which generated a tensile stress of 166 MPa on the Al surface. The shear strength remains constant at 32.1 MPa after high-temperature storage at 250 °C for 500 h, which suggests that the Al sheet possesses excellent high-heat resistance and thermal stability This novel approach of die-attach bonding technology serves as an attractive alternative for SiC power devices that require high-temperature performance. As thermal stress significantly affects the lifetime of the power modules, a soft intermediate bonding layer for suppressing the stress applied to the chip die is necessary
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