Low temperature self-growth of organic-inorganic perovskite nanowires for high performance flexible photodetectors

Abstract

There has been a huge drive to explore flexible photodetectors for the large area growth of wearable, bendable, repeatable and lightweight electronics. This work describes the large-area ordered growth of MAPbI3 nanowires on PET (polyethylene terephthalate) by self-growth method at low temperature. The devices made of MAPbI3 nanowire exhibit high detectivity and responsivity of 2.403 × 1011 Jones and 7.62 A/W, respectively. Subsequently, the devices are bent at different angles (10°, 20°, 30°, 40° and 50°) and the on/off ratio of the photodetectors decreased by only 18.8 %. The device also maintained an extremely high photocurrent (a retention rate of 84.8 %) after 1000 bending cycles at 50°. Furthermore, the fluctuations of photocurrents and dark currents are small (fluctuating ∼4 %) after repeatedly bending in the range of 0° and 50° for 150 times, revealing that the MAPbI3 nanowire flexible photoelectronic device possesses good mechanical stability and excellent repeatability. Compared with that of the non-encapsulation device, the long-term stability of the encapsulated device is improved by 52.15 %. The simulation results also show that the photocurrent changes slightly with the change of bending angle, which further verifies that the MAPbI3 nanowires possesses advanced flexibility and stability at low bending angle. This method offers a straightforward and efficient way to prepare flexible photodetectors with high performance.