Low-temperature resistivity and susceptibility of the low-carrier density, one-dimensional S= [formula omitted] antiferromagnet Yb 4As 3

Abstract

We report on low- T ( T⩾0.02 K) measurements of the electrical resistivity, ρ( T, B), and the magnetic AC-susceptibility, χ ac( T, B), on the low-carrier density, one-dimensional S= 1 2 antiferromagnet Yb 4As 3 in magnetic fields B ⩽19 T . For 2 K⩽ T ⩽20 K we find ρ− ρ 0=AT 2 ( ρ 0: residual resistivity), with a large coefficient A ≈0.75 μΩ cm/K 2 followed by a minimum around 1 K and a 0.1% increase for T→0. In finite fields and below about 5 K, ρ( T, B) shows a history-dependent hysteretic behavior. The oscillatory behavior superimposed is attributed to the Shubnikov–de Haas effect arising from a low density of mobile As–p holes. For T ⩾0.4 K , χ ac( T) follows the prediction of the quantum sine-Gordon model. A cusp-like anomaly is found at 0.15 K.