Low Temperature Relaxation of Donor Bound Electron Spins in ^{28}Si:P.

E. Sauter,M. Oestreich,N. V. Abrosimov,J. Hübner

doi:10.1103/physrevlett.126.137402

Abstract

We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped ^{28}Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20h. The ^{28}Si:P spin relaxation rate increases linearly with temperature in the regime below 1K and shows a distinct transition to a T^{9} dependence which dominates the spin relaxation between 2 and 4K at low magnetic fields. The T^{7} dependence reported for natural silicon is absent. At high magnetic fields, the spin relaxation is dominated by the magnetic field dependent single phonon spin relaxation process. This process is well documented for natural silicon at finite temperatures but the ^{28}Si:P measurements validate additionally that the bosonic phonon distribution leads at very low temperatures to a deviation from the linear temperature dependence of Γ as predicted by theory.

Highlights

Silicon is one of the most promising materials for spinbased quantum information processing [1,2,3,4,5,6,7,8,9,10,11,12] in which the increasing availability of isotopically purified 28Si [13] accelerates the development of prospective spin-based quantum information technologies
The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h
This process is well documented for natural silicon at finite temperatures but the 28Si∶P measurements validate that the bosonic phonon distribution leads at very low temperatures to a deviation from the linear temperature dependence of Γ as predicted by theory

Summary

Introduction

Silicon is one of the most promising materials for spinbased quantum information processing [1,2,3,4,5,6,7,8,9,10,11,12] in which the increasing availability of isotopically purified 28Si [13] accelerates the development of prospective spin-based quantum information technologies. Low Temperature Relaxation of Donor Bound Electron Spins in 28Si∶P We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped 28Si∶P.

Results

Conclusion