Abstract
The low temperature recrystallization behaviour of completely amorphized InP layers is investigated by means of RBS channeling and TEM measurements in the temperature region 150 to 400°C as a function of the annealing time. The resulting layers consist of a well annealed and a defective near surface layer containing a high density of microtwins. The thickness of the well annealed region increases with the annealing time and reaches a saturation value which depends on the temperature and is independent of the thickness of the initial amorphous layer. With increasing temperature the time to reach the saturation value decreases.
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