Low temperature recombination lifetime in Si metal oxide semiconductor field effect transistors

Abstract

The recombination lifetime τr has been measured at low temperature in Si p-channel metal oxide semiconductor field effect transistors (MOSFET’s) using the charge pumping technique. Measurements were performed over the 40–300-K range. A monotonically increasing lifetime with decreasing temperature was measured. τr was found to be proportional to exp(Ar/kT), where Ar is a constant determined from the slope of ln τ vs 1/T. For a typical MOSFET the lifetime ranged from 80 ns at 300 K to 370 μs at 100 K. The value of Ar in this case was determined to be 106 meV.