Abstract
An investigation of low temperature reactive ion etching of silicon to produce ultra small structures is presented. Plasmas containing SF/sub 6//O/sub 2/ were used to etch silicon samples in the temperature range +25/spl deg/C to -140/spl deg/C. At low flow rates and temperatures the etching produces nearly anisotropic etching in agreement with predictions of the reactive spot model. At higher flow rates etching produced facetted features indicating higher chemical reactivity of the plasma with the silicon.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
