Abstract
Al - 12% Si alloy system was used as nutrient flux to grow silicon carbide at low temperature by reactive flux growth. Thick films were grown below 900°C on a SiC substrate having Al-Si melt rotated with a speed of 30rpm in a graphite cruciblein nitrogen atmosphere. A constant 2 atmospheric pressure of nitrogen was used on the melt. Using longer soak time of the melt in the presence of carbon impurity, the destruction of dendritic morphology was observed that subsequently resulted into the formation of cellular, colony and facetted crystal morphology. Photoluminescence data from film showed SiC with higher band gap in the presence of aluminum nitride. Keywords: A1.Crystallites; A1. Nucleation; A1. Optical morphology; A1.Solidification; A2. Growth from melt; B2.Semiconducting silicon compound;
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