Abstract
The results of low-temperature electron irradiation (0.80–1.50 MeV) of B-doped p-type silicon are reported. For each sample measurements of capacitance and loss factor were carried out at different doses of irradiation and at different temperatures. The production rates of defects in the samples are estimated using two methods, based independently on hopping conductivity and Schottky barrier capacitance. Results of annealing experiments done on the samples are discussed in the light of known defect and impurity behaviour. A hole trap observed at ≈( E v+0.23±0.02) eV is ascribed to the divacancy (+/0) donor state.
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