Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer

Abstract

A Schottky diode based on amorphous wide bandgap oxide semiconductor is experimentally demonstrated with reasonable performance. The Schottky barrier is formed between the room-temperature sputtered amorphous indium-tin-zinc-oxide/indium-gallium-zincoxide bilayer and platinum, and a highly-resistive, selfaligned junction termination region is implemented at only 280 °C. Due to such low-temperature process, oxide-based Schottky diode is very attractive in terms of low manufacturing cost and back-end-of-line (BEOL) integration compatibility. The proposed Schottky diode has an ideality factor of 1.2 and a high rectification ratio of 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> at ±1.5 V. The extracted specific ON -resistance is 7.8 mΩ·mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and the breakdown voltage is 26.4 V. With approximately the same Baliga's figure-of-merit as that of the single-crystal silicon counterparts, the proposed Schottky diode is therefore promising for power electronic applications.