Low Temperature Processed Metal-Semiconductor-Metal Phtodetectors on ZnSe/SI-GaAs (100)

Abstract

AbstractLow temperature (LT) processed ZnSe MSM photodetectors can be used for detecting Gamma rays or X-rays using scintillation crystals in many space and medical applications. Metalsemiconductor-metal (MSM) photodetectors were fabricated on undoped ZnSe grown by molecular beam epitaxy (MBE) on semi-insulating (100) GaAs substrates. The MSM photodetectors consist of interdigitated metal fingers with 2 μm, 3 μm, and 4 μm spacing on one chip. Probimide and SiO2 thin films were deposited to aid the LT lift-off process before the pattern generation. An interdigitated structure was achieved by photolithography and reactive ion etching. Pd Schottky metal was deposited at a substrate temperature near 77 K using a lift-off technique. The LT metallization provides an improved interface between metal and semiconductor interface. Continuous wave signal to noise ratio (SNR) of 1.57×104 was obtained for 2 μm interdigitated photodetectors, operated under 180 nW optical power at a wavelength of 400 nm. The detectors showed good DC saturation characteristics indicating a low surface recombination. Saturation current without illumination remained at around less than 1 pA for a ± 10 V biasing. Detectors exhibited linearity with light intensity and DC bias voltage suggesting no gain mechanism involved, and showed a high spectral responsivity (0.6 (A/W)) at a wavelength of 450 nm at 5V applied bias.