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Abstract
We have reduced the processing temperature of the bulk absorber layer in CH3NH3PbI3−xClx perovskite solar cells from 500 to <150 °C and achieved power conversion efficiencies up to 12.3%. Remarkably, we find that devices with planar thin-film architecture, where the ambipolar perovskite transports both holes and electrons, convert the absorbed photons into collected charge with close to 100% efficiency.
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