Low Temperature Process for Synthesis of (100) Textured Pb(Zr 0.48 Ti 0.52 )O 3 Thin Films on Si Substrate by Laser Lift-Off Transferring Technique

Abstract

(100) textured Pb(Zr0.48Ti0.52)O3 (PZT) films were prepared on silicon substrates by MOD process and laser lift-off technique. Textured PZT films were first grown on (001) Sapphire substrate, using Ba(Mg1/3Ta2/3)O3 (BMT) materials as buffer layer. The (100) textured PZT/BMT/Sapphire films were attached to Si substrate using a transient-liquid-phase Pd-In bonding process, and then were separated from Sapphire substrates by a laser lift-off process, in which, a 38 ns pulse from excimer laser (248 nm) at 600 mJ/cm2 fluence melted BMT buffer layer, expelling the Sapphire. The crystallinity of the surface of films was further improved by laser annealing. X-ray diffraction analysis of the PZT films showed that the crystallographic structure of films is maintained during laser lift-off process. Electrical testing of the films after laser lift-off process followed by laser annealing demonstrated that the ferroelectric properties are retained for the transferred films (Pr = 9μ C/cm2 and Ec = 74 kV/cm).