Abstract
In this study, we found that stable interface dipole modulation (IDM) is possible for HfO2/1-monolayer TiO2/SiO2 stack structures prepared by using a low temperature annealing process of about 300 °C. We investigated in detail the impact of thermal annealing on IDM characteristics. Even samples fabricated by post metallization annealing (PMA) below 200 °C exhibit the switching, and their width increases until the PMA temperature exceeds 300 °C. This temperature dependence shows a good correlation with a reduction in the sub-oxide component of interfacial Ti oxide caused by thermal annealing, suggesting that the formation of Ti-O bonds at the HfO2/SiO2 interface contributes to IDM. The experimental results observed in this study support the IDM mechanism based on the Ti-O bond breakage/repair process.
Highlights
We found that stable interface dipole modulation (IDM) is possible for HfO2/1monolayer TiO2/SiO2 stack structures prepared by using a low temperature annealing process of about 300 C
We investigated in detail the impact of thermal annealing on IDM characteristics
Even samples fabricated by post metallization annealing (PMA) below 200 C exhibit the switching, and their width increases until the PMA temperature exceeds 300 C
Summary
Low temperature preparation of HfO2/SiO2 stack structure for interface dipole modulation
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