Abstract
This work addresses the thin film analysis of ZnO and electrical characteristics of ZnO TFTs with HfO2 high-k gate dielectrics after low temperature post-annealing. The SIMS analysis shows that the diffusion of Zn atoms into the HfO2 will occur after 300 oC annealing and the related electrical characteristics indicates that the 200 oC annealing will be the optimized annealing condition for the ZnO/HfO2/ITO based TFTs. The ZnO TFTs after optimized annealing condition exhibited transistor behavior over the range 0-7 V; the field effect mobility, subthreshold slope and on/off ratio were measured to be 1.3 cm2V-1s-1, 0.5 V/decade and ~106, respectively.
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