Year-end Sale % OFF 
Abstract
A polycrystalline-silicon (poly-Si) thin-film transistor (TFT) deposited at low temperature on Corning 7059 glass is reported. It has practical applications for low-cost thin-film display and imaging electronics manufacturing. All the process steps used to fabricate the poly-Si device take place at temperatures of 550 degrees C or less. The poly-Si films exhibit crystallite grain sizes on the order of 5000 AA, and the fabricated devices show field-effect mobilities of 10-20 cm/sup 2//V-s and threshold voltages around zero. A plasma process to form the source and drain contacts has also been developed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
