Abstract
ABSTRACTDirect deposition of polycrystalline silicon (poly-Si) thin films by the Hot Wire CVD method has been used for the first time for the fabrication of poly-Si top gate Thin Film Transistors (TFTs). The TFTs have a high electron mobility in saturation of up to 4 cm2V−1s−1 as well as a remarkably large ON/OFF ratio of up to 6 × 105.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
