Abstract
Carbon films were prepared by the plasma-enhanced chemical vapor deposition method from methane gas under different regimes of a growing film surface ion bombardment. Ion energy and ion flux was measured for different deposition regimes and were controllably and independently varied for deposition of different film samples. The structure of the films deposited was studied by Raman scattering spectroscopy. It was found that ion bombardment of the growing film surface is a key factor in hard carbon films deposition. A correlation between the sp 3 hybridized carbon fraction content with both ion energy and ion flux was found. The maximum sp 3 hybridized carbon fraction content was achieved for films deposited under maximum ion energy and ion flux conditions. Additionally, a dependence of the film properties on the substrate material and on the final film thickness was observed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
