Abstract
In this work chemical and electrical properties of TiN films, grown by low temperature plasma‐enhanced atomic layer deposition (PE‐ALD) process from TiCl4 and NH3, were investigated. Electrical resistivity as low as 250 μOhm × cm, as well as the lowest Cl impurity content, was achieved at 320 °C. Full‐ALD Hf0.5Zr0.5O2‐based metal‐ferroelectric‐metal capacitor with TiN electrodes was fabricated and its electrical properties were investigated. It was also shown that the proposed PE‐ALD process provides an early film continuity, which was confirmed by ultrathin fully continuous film growth. Such ultrathin (3 nm) and fully continuous TiN film was also successfully implemented as the top electrode to Hf0.5Zr0.5O2‐based ferroelectric capacitor. Angle‐resolved X‐ray photoelectron spectroscopy (AR‐XPS) was used for its thickness determination and a visible wake‐up effect in underlying Hf0.5Zr0.5O2 layer was clearly observed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
