Abstract
Low temperature growth of hydrogenated chlorinated crystal silicon [µc-Si:H(Cl)] films from dichlorosilane (SiH2Cl2) by conventional rf glow discharge (13.56 MHz) is investigated. The role of chlorine and hydrogen in crystal formation is discussed in terms of studies on gas phase and surface chemistry through film deposition, plasma diagnostics and in situ monitoring of the surface reaction. The electron temperature in the SiH2Cl2/H2 plasma significantly depends on not only pressure but also substrate temperature. The surface termination species depend on substrate temperature and hydrogen flow rate. The growing top surface is mainly terminated by chlorine as SiCln (n=1, 2). Specific features of crystal formation at low temperatures from SiH2Cl2/H2 plasma are demonstrated and compared with those from SiH4/H2.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
