Low temperature plasma deposited SiO2/organosilicon stacked film for transparent gate dielectric of InGaZnO thin film transistor

Abstract

In this article, a 5-pair SiO2/organosilicon stacked film fabricated by inductively coupled plasma-enhanced chemical vapor deposition from hexamethyldisiloxane /O2 at low temperature was introduced as InGaZnO thin film transistor (IGZO TFT) gate dielectric for transparent flexible displays. The dielectric film has the flexibility of organosilicon while maintaining the high dielectric strength of SiO2. Due to the introduction of organosilicon, which connects with the IGZO active layer, the deep-state electron traps formed by oxygen vacancies are reduced, and moderate hydrogen diffused into IGZO layer becomes a shallow donor. Under the premise of high transmittance of the dielectric film, a high-performance TFT with mobility of 15.60 cm2/Vs was obtained.