Abstract
In the high-temperature thermal oxidation of Si, the SiO 2/Si interface is continuously regenerated as the bulk oxide grows. This paper describes an alternative low temperature, 200–300 °C, plasma-assisted process that optimizes electrical properties of SiO 2/Si interfaces and bulk SiO 2 layers by separately controlling interface formation and bulk oxide deposition. Composite dielectrics, oxide/nitride (ON) and oxide (ONO), have been fabricated by extending the low temperature plasma-assisted processes to include deposition of Si 3N 4 films. The electrical properties of SiO 2/Si structures formed by the two-step, low temperature oxidation-deposition process are essentially the same as those of SiO 2/Si structures formed by high temperature, 850–1050 °C, thermal oxidation. The electrical properties of devices incorporating ON and ONO composite dielectrics are degraded with respect to the SiO 2/Si structures, but are similar to those of composite dielectrics formed by combinations of high temperature processing.
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