Abstract

In this study, an optimization to the Physical Vapour Deposition (PVD) process for low thermal stability temporary bonding adhesives is proposed. Deposition of Cu Seed layer in via trenches were demonstrated on various substrates: Silicon-Silicon bonded, Silicon-Glass bonded and Mould-glass bonded substrates. Surface temperatures recorded on these substrates during processing were far lower than critical temperatures of temporary bonding and de-bonding (TBDB) materials. This paper focuses on innovations of Through Silicon Vias (TSV) applications in 2. 5D/3D Integrated Circuit (IC) packaging for the PVD process. These results would pave the way for the robust integration of a variety of temporary bonded adhesives with low thermal stability with Silicon-via-contacts, at significantly lower temperature ranges.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.