Abstract
AbstractIn situ Zn-doped InP layers are grown by low pressure metalorganic chemical vapor deposition at 620°C. Hole concentration increases with dopant flow rate, but reaches a saturated hole concentration of approximately 1.5 × 1018/cm3. Differently from the Zn-diffused InP case, photoluminescence (PL) of the in situ Zn doped InP shows band edge peak, e/D-A peak and distant D-A peak up to the hole concentration of 7.6 × 1017/cm3. These results can be explained by less generation of interstitial Zn atoms during in situ doping. PL characteristics of the in situ Zn-doped InP at the saturated hole concentration is extensively studied to explain its compensation mechanism. Two new deep bands, presumably responsible for the hole saturation behavior, are observed for the first time.
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