Abstract
Photoluminescence (PL) spectra of TlGa0.5In0.5Se2 layered crystals have been studied in the wavelength region of 900–1020nm and in the temperature range of 10–61K. A broad PL band centered at 951nm (1.304eV) was observed at T=10K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.15–51.5mWcm−2 range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission band is in agreement with the idea of separation inhomogeneity of donor–acceptor pairs. Radiative transitions from donor level located at 647meV below the bottom of conduction band to shallow acceptor level located at 22meV above the top of the valence band were suggested to be responsible for the observed PL band.
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