Abstract
ABSTRACTPtSi on As-doped polysilicon oxidizes rapidly at temperatures as low as 500 °C. The resulting SiO2-PtSi and PtSi-polysilicon interfaces are very rough. Silicide inclusions are present in the oxide, probably due to differences in oxidation rate between different PtSi grains. The presence of some inclusions near the SiO2 surface suggests that PtSi dissociates during oxidation. Rapid oxidation does not occur for PtSi on B or P-doped polysilicon, or for As concentrations of 1×1020 cm−3 or less.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
