Abstract
Peculiarities of the Overhauser effect for arsenic atoms in silicon in a strong magnetic field at low temperatures are considered. Dynamic equations describing the change in the electron paramagnetic resonance (EPR) signal at times exceeding the spin relaxation time have been obtained and solved. Under these conditions, the EPR signal intensity dependence on the pumping time is governed by the rate of the nuclear polarization. It is shown that the degree of nuclear polarization can reach significant value even for relatively weak pumping, and the times of establishment of nonequilibrium nuclear polarization differ significantly from the cross-relaxation time.
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