Abstract
This study investigates the effect of glow-discharge induced ion bombardment (IB) on low-temperature ordering in FePt films. H, He, and Ar ions are used. Extensive ordering occurs at 300 °C via IB at energy below sputtering threshold, achieving the degree of ordering comparable to 400 °C of thermal annealing. Distinct ordering mechanism is identified. H-IB films undergo grain-growth-dominated transformation, similar to thermal annealing. However, Ar-IB modifies diffusion behavior causing nucleation-controlled process, realizing high ordering and refined microstructure simultaneously. The mechanisms can be thoroughly elucidated by diffusion-modified nucleation-growth kinetics. The results significantly contribute to efforts in microstructure engineering for advanced thin film devices.
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