Low-temperature ordering of FePt by formation of silicides in underlayers

Abstract

A low-temperature ordering of FePt was achieved by introducing dynamic stress. The ordering temperature of FePt was reduced to 300°C by using a Cu underlayer on the HF-cleaned Si (001) substrate. An in-plane coercivity as high as 6900Oe can be obtained after post-annealing at 300°C. The formation of copper silicide, Cu3Si, during post-annealing induces a dynamic stress on FePt films, which greatly reduces the ordering temperature. Pt silicides also help to reduce the ordering temperature. The low-temperature ordering of FePt can be realized with Si∕Cu underlayers on glass substrates.