Abstract
This paper describes the results of recent experiments with high power surface gate static induction transistors (SITs) operated at and near liquid nitrogen temperatures. The temperature dependence of important large signal and small signal device parameters over a wide range of operating temperatures is described. UHF power performance of liquid nitrogen cooled SIT power amplifiers is described as well. At 425 MHz, a single transistor power amplifier has been fabricated which exhibits output power levels > 350 W with 8 dB gain and nearly 80% drain efficiency. Smaller test devices have been used in an 850 MHz amplifier, which exhibits 30 W c.w. with 7.8 dB gain and 64% drain efficiency.
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