Low-temperature operating life of continuous 300-K AlxGa1−xAs-GaAs quantum-well heterostructure lasers grown on Si

Abstract

Data are presented on the continuous (cw) 77–200 K operational characteristics of cw 300-K AlxGa1−xAs-GaAs quantum-well heterostructure diode lasers grown on Si substrates. Operation is demonstrated for over 500 h with a junction temperature as high as ∼200 K for a diode previously operated cw 300 K for over 10 h with its junction side mounted away from the heat sink. The data indicate that longer cw 300-K lifetimes than previously demonstrated (17 h) may be possible. The effects of the optical power level on the degradation rate are examined, and it is shown that the maximum cw 300-K power output for these devices (∼30 mW/facet) is limited by catastrophic facet degradation. The effects of naturally occurring microcracks on device stability are also considered, and the effect of stress on the output polarization is measured and discussed.