Abstract
Amorphous zinc tin oxide bottom gated thin film transistor based H2S sensor is reported here. On exposure to H2S, the transfer curve of the device showed a negative directional shift indicating the analyte gas is reducing in nature. A shift of ∼6 V was observed in threshold voltage by exposing to 50 ppm H2S for 120 s compared to the non-exposed device. The fabricated device showed a considerable response value of 0.35 with exposure to 1 ppm H2S at a lower operating temperature of 70 °C. On exposure to other reducing gases like propanol, ammonia, ethanol, and acetone with a concentration of 50 ppm the transfer curve showed negligible shift, indicating a poor response. The sensor response and recovery time for 1 ppm H2S exposure were found to be 96 and 123 s, respectively. The sensing mechanism and reason for the large response time were discussed. Selectivity in a mixture of gases was tested, and the device showed a response only to H2S at lower concentrations. The theoretical limit of detection is calculated to be 150 ppb.
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