Abstract
A new technique of growing nitrided oxide at low temperatures has been developed. Fluorine-enhanced thermal oxidation of silicon in O2+NF3 at temperatures below 800 °C and subsequent annealing of the fluorinated oxide in pure ammonia gas at the same temperature result in the formation of nitrided oxide. The dielectric breakdown strength of the fluorinated oxide is improved by the nitridation. Also, the nitrided oxide acts as a protective layer against alkaline ion contamination.
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