Low temperature nitridation and hydrogenation of Si films with NH : a photoemission study

Abstract

By non assisted, thermal dissociation of NH 3 molecules on growing Si surfaces held at 550K a hydrogenation process, without nitridation, is identified by UV photoemission experiments. We also propose a XPS binding energy identification for the nitrogen related environments with Si issue from NH 3 below 550K (absorbed NH 3, amide SiNH 2, imide Si 2 = NH) and above 550K (nitride Si 3 = N).