Low temperature nanocrystallízation of silicon carbide by hydrogen reactive magnetron sputtering

Abstract

Abstract Hydrogenated SiC thin films were deposited at various temperatures T d from 100 to 600°C by means of reactive magnetron sputtering in a pure hydrogen plasma. The detailed structural analysis was performed by three complementary techniques: transmission electron microscopy in both conventional and high resolution modes, infrared absorption spectroscopy and X-ray diffraction. The results from the three techniques agree, revealing an onset of crystallization at a Td value as low as 300°C. There, the crystalline fraction was found to reach nearly 40∼ and to improve to 60∼ when T d increases further to 600°C. The SiC nanocrystals, of 4–5 nm average size, were found to grow in the close proximity of the interface with the crystalline silicon substrate without any clear amorphous buffer layer. The interface appears abrupt and of good quality, almost free from noticeable defects. These structural features are quite consistent with the electronic and optical properties of the layers reported earlier, enabling portrayal of a well-defined synthesis-structure-properties relationship.