Abstract
Nanocrystalline antireflective silicon nitride (Si3N4; 75nm) film was deposited on a silicon P (111) substrate by a radio frequency sputtering system. The film was prepared in reactive nitrogen–argon (N2–Ar) atmospheres with substrate heating at 200°C. The average crystallite size was 1.06nm for the Si3N4 film. The RMS roughness was found to be 0.62nm, the results revealed fine nanocrystallites of Si3N4 film. Optical reflectivity measurements through Filmetrics at λ=525nm showed the minimum reflectivity (400–1000nm) R=1.30%. The X-ray diffraction data exhibited seven predominant peaks along (200), (101), (111), (301), (320), (102) and (302) for Si3N4 nanocrystalline film while one peak at 2θ=28.32° was due to P (111) layer.
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