Abstract
The practical use of silicon wafer bonding in fabricating sensors, actuators, and microelectromechanical structures has grown rapidly and is presently receiving increasing attention. Currently, direct silicon bonding is achieved at temperatures which generally are not feasible after metallization in microelectromechanical system (MEMS) processing. 1-4 High temperature anneals (usually in excess of 700°C) may cause doping profile broadening, defect formation, induction of thermal stress between dissimilar materials, and dissociation between materials. Therefore, the high annealing temperature of silicon fusion bonding, typically >1000°C, restricts its application in the field of MEMS. In contrast to the high temperature fusion bonding, low temperature fusion bonding is not strong enough to guarantee high yielding devices during subsequent pro
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