Abstract
The practical use of silicon wafer bonding in fabricating sensors, actuators, and microelectromechanical structures has grown rapidly and is presently receiving increasing attention. Currently, direct silicon bonding is achieved at temperatures which generally are not feasible after metallization in microelectromechanical system (MEMS) processing. 1-4 High temperature anneals (usually in excess of 700°C) may cause doping profile broadening, defect formation, induction of thermal stress between dissimilar materials, and dissociation between materials. Therefore, the high annealing temperature of silicon fusion bonding, typically >1000°C, restricts its application in the field of MEMS. In contrast to the high temperature fusion bonding, low temperature fusion bonding is not strong enough to guarantee high yielding devices during subsequent pro
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
