Abstract
Low-carrier density and high-crystallinity molybdenum disulfide (MoS2) films were fabricated by low-temperature and clean process based on a UHV RF sputtering system. This paper focuses on improving crystallinity and reducing the number of sulfur defects of sputtered-MoS2 film. We have fabricated MoS2 films at lower than 400°C using the sputtering and H2S post-deposition annealing processes. Consequently, MoS2 films with high crystallinity and appropriate S/Mo ratio were obtained. Eventually, a low carrier density of 3.5 $\times 10^{17}$ cm−3 and the Hall-effect mobility of 12 cm $^{2}\text{V}^{-1}\text{s}^{-1}$ were achieved.
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