Abstract
AbstractA theoretical model for the calculation of the mobility of a two‐dimensional hole gas (2DHG) supported by a heterojunction is presented. Different scattering mechanisms that put a limit to the inherent mobility of the 2DHG system, like the background impurity scattering, remote impurity scattering, deformation potential, and piezoelectric acoustic phonon scattering, and polar optical phonon scattering, have been included. Dynamic screening of the hole gas has been derived. Screening plays a very important role in the scattering of the heavier hole gas than for the lighter electrons. A discrepancy between the experimental and the theoretical effective hole masses existing in earlier theoretical models has been overcome in the present communication.
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