Abstract
A study of gold migration in silicon monoxide in the temperature range 200°–600°C has been carried out using the Rutherford scattering technique. It has been found that for plane sources, diffusion occurs which can be characterized by the normal Arrhenius form. For thick gold sources this temperature relation is followed until the silicon‐gold eutectic temperature is exceeded at which point a rapid migration of the gold occurs and a high concentration is established in the film.
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