Abstract
Low temperature (ranging from ) metal induced lateral crystallization of Ge using germanide forming metals Ni, Co, and Pd is performed. The lateral growth lengths and crystallized Ge films’ quality are optimized when annealed at , above which self-nucleation in Ge hinders the metal induced crystallization process. At , the sample with Pd as the seed metal has the largest lateral growth length, while the sample using Co as the seed layer exhibits the largest crystal grain size. The experiments suggest that the lateral growth length is associated with the diffusivity of the metal and germanide in Ge, while the crystal quality is related to the lattice mismatch between germanide and Ge.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
